Selected Publications

1. Nagata T.; Kumaragurubaran S.; Tsunekawa Y.; Takahashi K.; Ri S-G.; Suzuki S.; and Chikyow T.; ‘Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor’, Japanese Journal of Applied Physics, vol. 55: 06GJ12, May2016.
2. Kumaragurubaran S.; Nagata T.; Tsunekawa Y.; Takahashi K.; Ri S-G.; Suzuki S.; and Chikyow T.; ‘Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor’, Thin solid films, vol. 592:29-33, Sep2015.
3. Kumaragurubaran S.; Nagata T.; Takahashi K.; Ri S-G.; Tsunekawa Y.; Suzuki S.; and Chikyow T.; ‘Combinatorial synthesis of BaTiO₃-Bi(Mg_2/3Nb_1/3)O₃ thin-films for high-temperature capacitors ’ , Japanese Journal of Applied Physics, vol. 54: 06FJ02, Apl2015.
4. Kumaragurubaran S.; Nagata T.; Takahashi K.; Ri S-G.; Tsunekawa Y.; Suzuki S.; and Chikyow T.; ‘BaTiO₃ based relaxor ferroelectric epitaxial thin-films for high-temperature operational capacitors’, Japanese Journal of Applied Physics, vol. 54: 04DH02, Jan2015.
5. Suga H.; Horikawa M.; Kumaragurubaran S.; Furuta S.; Masuda Y.; Shimizu T.; Naitoh Y.; ‘Resistance switch using metal nanogap electrodes in air’, Journal of Applied Physics, Vol. 112: 044309, Aug 2012.
6. Kumaragurubaran S.; Takahashi T.; Masuda Y.; Furuta S.; Sumiya T.; Ono M.; Shimizu T.; Suga H.; Horikawa M.; Naitoh Y.; ‘Non-volatile high-speed resistance switching nanogap junction memory’, Applied Physics Letters, Vol. 99:263503, 26 Dec 2011.

Selected Patents

1. Drive method for memory elecment, and storage device using memory element
   Takahashi T., Kumaragurubaran S. et al
   PCT/JP2011/069117
2. Drive method for memory elecment, and storage device using memory element
   Takahashi T., Kumaragurubaran S. et al
   PCT/JP2011/069113
3. Ohmic electrode for Diamond semiconductor device
   Yamada T., Kumaragurubaran S., Shikata S.
   PCT/JP2010/062219