Dr Madhu Thalakulam
Associate Professor (Physics)
  +91 (0)471 - 2778084
  madhu@iisertvm.ac.in
Strain Engineering the Schottky barrier and electrical transport on MoS2
Ashby J Philip, Arya Tthenapparambil and Madhu Thalakulam, Nanotechnology 31, 275703 (2020)
Electrocatalysis on edge-rich spiral WS2 for hydrogen evolution
Prasad V. Sarma, Arijit Kayal, Chithra H. Sharma, Madhu Thalakulam, J. Mitra, M. M. Shaijumon, ACS-Nano,13, 10448 (2019)
2D superconductivity and vortex dynamics in 1T-MoS2
Chithra H. Sharma, Ananthu P.S., Sangeeth S. Varma and Madhu Thalakulam Communications Physics1, 90 (2018)
Stable and scalable 1T MoS2 with low-temperature coefficient of resistance.
Chithra H. Sharma, Ananthu P.S., Abin Varghese and Madhu Thalakulam Scientific Reports8, 12463 (2018)
Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures.
Chithra H. Sharma and Madhu Thalakulam Scientific Reports7, 735 (2017)
Topography preserved microwave plasma etching for top-down layer engineering in MoS2 and other van der Waals materials.
Abin Varghese, Chithra H. Sharma and Madhu ThalakulamNanoscale, 9, 3818 (2017)
Chaotic quantum transport near the charge neutrality point in inverted type-II InAs/GaSb  field-effect transistors.
W. Pan, J. F. Klem, J. K. Kim, M. Thalakulam, M. J. Cich, and S. K. Lyo, Appl. Phys. Lett., 102, 033504, (2013).
Single-shot charge sensing and tunnel-rate spectroscopy of a few electron Si/SiGe quantum dot. Madhu Thalakulam, et al.,Phys. Rev. B, 84, 045307 (2011).
Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot.B. Simmons, Teck Seng Koh, Nakul Shaji, Madhu Thalakulam, Levente J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, R. H. Blick, Mark Friesen, S. N. Coppersmith and, M. A. Eriksson.Phys. Rev. B, 82, 245312 (2010).
Toward Si/SiGe quantum dot spin qubits: Gated Si/SiGe single and double quantum dots.C. B. Simmons, J. R. Prance, Madhu Thalakulam, B. M. Rosemeyer, B. J. Van Bael,D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N. Coppersmith, and M. A. Eriksson.ECS Tran. 33, 639 (2010).
A macroscopic mechanical resonator driven by mesoscopic electrical backaction.J. Stettenheim, MadhuThalakulam, FengPan, Mustafa Bal, Z. Ji, W. W. Xue,LorenPfeiffer, K. W. West, and A. J. Rimberg,Nature, 466, 86 (2010).
Fast tunnel rates in Si/SiGe one-electron single and double quantum dots. Madhu Thalakulam, C. B. Simmons, B. M. Rosemeyer, D. E. Savage, M. G. Lagally,M. Friesen, S. N. Coppersmith, and M. A. Eriksson,Appl. Phys. Lett., 96, 183104 (2010).
Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot.C. B. Simmons, Madhu Thalakulam, B. M. Rosemeyer, B. J. Van Bael, E. K.Sackmann, D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N. Coppersmith, and M. A. Eriksson,Nano. Lett. 9 3234 (2009).
Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot.Nakul Shaji, C. B. Simmons, Madhu Thalakulam, Levente J. Klein, Hua Qin, H. Luo,D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N.Coppersmith, M. A. Eriksson,Nature Physics 4, 540 (2008).
Single-electron quantum dot in Si/SiGe with integrated charge sensing.C.B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R.H.Blick, D.E. Savage, M.G. Lagally, S.N. Coppersmith, and M.A. Eriksson,Appl. Phys. Lett. 91, 213103 (2007).
Shot-noise-limited operation of a fast quantum-point-contact charge sensor. MadhuThalakulam, W. W. Xue, FengPan, Z. Ji, J. Stettenheim, LorenPfeiffer, K. W.West, and A. J. Rimberg.arXiv:0708.0861
Real-time electron counting in semiconductor nanostructures.A. J. Rimberg, Madhu Thalakulam, W. Lu, Z. Ji, L. N. Pfeiffer and K. W. West,Proceedings of SPIE, 5790 (2005) 254.
Sensitivity and linearity of superconducting radio-frequency single-electron transistors: effects of quantum charge fluctuations. Madhu Thalakulam, Z. Ji, A. J. Rimberg,Phys. Rev. Lett. 93, 066804 (2004).