Dr Somu Kumaragurubaran
Associate Professor (Physics)
  +91 (0)471 - 2778103
  guru@iisertvm.ac.in

Selected Publications

  1. Nagata T.; Kumaragurubaran S.; Tsunekawa Y.; Takahashi K.; Ri S-G.; Suzuki S.; and Chikyow T.; ‘Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor’, Japanese Journal of Applied Physics, vol. 55: 06GJ12, May2016.
  2. Kumaragurubaran S.; Nagata T.; Tsunekawa Y.; Takahashi K.; Ri S-G.; Suzuki S.; and Chikyow T.; ‘Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor’, Thin solid films, vol. 592:29-33, Sep2015.
  3. Kumaragurubaran S.; Nagata T.; Takahashi K.; Ri S-G.; Tsunekawa Y.; Suzuki S.; and Chikyow T.; ‘Combinatorial synthesis of BaTiO3-Bi(Mg2/3Nb1/3)O3 thin-films for high-temperature capacitors ’ , Japanese Journal of Applied Physics, vol. 54: 06FJ02, Apl2015.
  4. Kumaragurubaran S.; Nagata T.; Takahashi K.; Ri S-G.; Tsunekawa Y.; Suzuki S.; and Chikyow T.; ‘BaTiO3 based relaxor ferroelectric epitaxial thin-films for high-temperature operational capacitors’, Japanese Journal of Applied Physics, vol. 54: 04DH02, Jan2015.
  5. Suga H.; Horikawa M.; Kumaragurubaran S.; Furuta S.; Masuda Y.; Shimizu T.; Naitoh Y.; ‘Resistance switch using metal nanogap electrodes in air’, Journal of Applied Physics, Vol. 112: 044309, Aug 2012.
  6. Kumaragurubaran S.; Takahashi T.; Masuda Y.; Furuta S.; Sumiya T.; Ono M.; Shimizu T.; Suga H.; Horikawa M.; Naitoh Y.; ‘Non-volatile high-speed resistance switching nanogap junction memory’, Applied Physics Letters, Vol. 99:263503, 26 Dec 2011.

Selected Patents

  1. Drive method for memory elecment, and storage device using memory element
    Takahashi T., Kumaragurubaran S. et al
    PCT/JP2011/069117
  2. Drive method for memory elecment, and storage device using memory element
    Takahashi T., Kumaragurubaran S. et al
    PCT/JP2011/069113
  3. Ohmic electrode for Diamond semiconductor device
    Yamada T., Kumaragurubaran S., Shikata S.
    PCT/JP2010/062219