Optical and electrical properties of sputtered Nb-substituted TiN thin film.

Abstract : Optical and electrical properties of Nb-substituted TiN thin films were going to present in my talk. The films were deposited on stainless steel substrate by radio frequency reactive magnetron sputtering in 100% N₂ plasma. The reflectance spectra of the films, in the energy range 1.5 to 5.5 eV, are fitted using the Drude–Lorentz model as the response of one Drude parameter and four Lorentz oscillators. The real part of the dielectric function is characterized by a screened plasma energy of 2.25 eV for TiN and the value is increased to 3.25 ± 0.2 eV for Ti_1-xNb_xN (x=0.77). The room temperature electrical resistivity of Ti_1-xNb_xN thin films decreased with increasing Nb concentration. Nb concentration dependent nanoscale electrical transport properties of Ti_1-xNb_xN films were studied using conductive-atomic force microscopy. Finally, I will give a brief introduction to atomic layer deposition (ALD) as a future plan. Nanostructures growth using ALD will be discussed.